Mitsubishi Electric - RA35H1516M

  1. Home
  2. Mitsubishi Electric - RA35H1516M
RA35H1516M by Mitsubishi Electric

Image shown is a representation only.

Manufacturer Mitsubishi Electric
Manufacturer's Part Number RA35H1516M
Description NARROW BAND HIGH POWER; Construction: MODULE; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 162 MHz; Minimum Operating Frequency: 154 MHz; Maximum Voltage Standing Wave Ratio: 3;
Datasheet RA35H1516M Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: MODULE
Maximum Input Power (CW): 20 dBm
Minimum Operating Frequency: 154 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 110 Cel
Maximum Operating Frequency: 162 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SGA-6489Z by Sirenza Microdevices

SGA-6489Z

Sirenza Microdevices

SGA-6489Z by Sirenza Microdevices is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and VSWR of 1.8, suitable for surface mount applications in RF & microwave systems.
PGA-103+ by Mini-circuits

PGA-103+

Mini-circuits

Mini-circuits' PGA-103+ is a wideband low-power RF amplifier with 14.7 dB gain, operating from 50 MHz to 4 GHz. It can handle up to 26 dBm CW input power and has a temperature range of -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
HMC311SC70ETR by Hittite Microwave

HMC311SC70ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;
SGA6489Z by Qorvo

SGA6489Z

Qorvo

SGA6489Z by Qorvo is a wide band low power RF amplifier with 18.4 dB gain, operating from 0 to 3500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40°C to 85°C. This component is ideal for RF and microwave applications requiring high performance in a compact package.
RF5110G by Qorvo

RF5110G

Qorvo

Qorvo's RF5110G is a GAAS technology narrow band high power amplifier with 32 dB gain. It operates b/w 880-915 MHz, handles up to 13 dBm CW input power, and has a VSWR of 10. Suitable for RF applications requiring high power amplification in the frequency range.
NBB-310 by Rf Micro Devices

NBB-310

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;
RF3827 by Qorvo

RF3827

Qorvo

Qorvo's RF3827 is a wide band medium power amplifier with 20dB gain, operating from 5MHz to 1500MHz. It has a max input power of 13dBm and VSWR of 20, suitable for RF applications requiring up to 8V supply voltage. The component is constructed using GaAs technology in a plastic/epoxy package, ideal for surface mounting in various RF and microwave systems.
HMC311LP3ETR by Hittite Microwave

HMC311LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;
HMC963LC4TR by Hittite Microwave

HMC963LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;
HMC505LP4TR by Hittite Microwave

HMC505LP4TR

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
HMC478SC70ETR by Hittite Microwave

HMC478SC70ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;
MGA-81563-BLKG by Agilent Technologies

MGA-81563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
NPA1003QAR by Nitronex

NPA1003QAR

Nitronex

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: LCC16,.16SQ,25;
MGA-53543-BLKG by Broadcom

MGA-53543-BLKG

Broadcom

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.
HMC564LC4TR-R5 by Analog Devices

HMC564LC4TR-R5

Analog Devices

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.
XP1035-QH-0G0T by M/a-com Technology Solutions

XP1035-QH-0G0T

M/a-com Technology Solutions

XP1035-QH-0G0T by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wide band medium power applications requiring surface mounting feature.
SGA-3363 by Rf Micro Devices

SGA-3363

Rf Micro Devices

SGA-3363 by RF Micro Devices is a wide band low power RF amplifier with 15.5 dB gain and 50 ohm impedance. It operates from 0 to 5500 MHz, has a max input power of 18 dBm, and requires a 2.6V power supply. This component is ideal for applications requiring high-frequency signal amplification in compact electronic devices.
NBB-400-T1 by Rf Micro Devices

NBB-400-T1

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 8000 MHz;
SGA-3563 by Rf Micro Devices

SGA-3563

Rf Micro Devices

SGA-3563 by RF Micro Devices is a wide band low power RF amplifier with a gain of 19.5 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and has a max input power of 18 dBm. This component, made of plastic/epoxy, is commonly used in RF and microwave applications.
TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;