Motorola - 2N5777

  1. Home
  2. Motorola - 2N5777
2N5777 by Motorola

Image shown is a representation only.

Manufacturer Motorola
Manufacturer's Part Number 2N5777
Description PHOTO DARLINGTON; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 25 V; Nominal Light Current: 4 mA; JESD-609 Code: e0; No. of Functions: 1;
Datasheet 2N5777 Datasheet
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: YES
Maximum Dark Current: 100 nA
Optoelectronic Type: PHOTO DARLINGTON
Configuration: SINGLE
Nominal Light Current: 4 mA
Peak Wavelength (nm): 800
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Collector-emitter Breakdown Voltage: 25 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIL627 by Texas Instruments

TIL627

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;
QSB363GR by Onsemi

QSB363GR

Onsemi

QSB363GR by Onsemi is a single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
SFH309P3 by Infineon Technologies

SFH309P3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .165 W;
TEMT1020 by Vishay Telefunken

TEMT1020

Vishay Telefunken

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum Dark Current: 200 nA; Maximum Response Time: .000002 s;
TIL615 by Texas Instruments

TIL615

Texas Instruments

TIL615 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 8ns and dark current of 25nA, it's ideal for through-hole mounting in various applications requiring precise light detection.
TEKT5400S-ASZ by Telefunken Microelectronics

TEKT5400S-ASZ

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;
SFH303F3 by Infineon Technologies

SFH303F3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel;
QSE113 by Qt Optoelectronics

QSE113

Qt Optoelectronics

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
TIL406 by Texas Instruments

TIL406

Texas Instruments

TIL406 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8µs. Ideal for applications requiring through hole mounting in various light sensing systems.
TIL404 by Texas Instruments

TIL404

Texas Instruments

TIL404 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W and response time of 8μs. Ideal for applications requiring through hole mounting, with max dark current of 25nA.
PT91-21B/TR10 by Everlight Electronics

PT91-21B/TR10

Everlight Electronics

Everlight Electronics' PT91-21B/TR10 is a 1.9mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
SFH320-3-Z by Osram Opto Semiconductors

SFH320-3-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH320-3-Z is a single phototransistor with peak wavelength of 980nm. It operates b/w -40 to 100°C, dissipating max 0.165W power. Ideal for applications requiring IR detection, it has a collector-emitter breakdown voltage of 35V and max on state current of 0.015A.
TPS616 by Toshiba

TPS616

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Minimum Operating Temperature: -30 Cel;
TPS615(C,F) by Toshiba

TPS615(C,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; No. of Functions: 1; Infrared (IR) Range: YES; Peak Wavelength (nm): 800;
SFH309PFA4 by Infineon Technologies

SFH309PFA4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;
QSE114 by Qt Optoelectronics

QSE114

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
TIL606 by Texas Instruments

TIL606

Texas Instruments

TIL606 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With fast response time of 8ns, it's ideal for surface mount applications requiring precise light detection.
OP505A by Optotek

OP505A

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum Power Dissipation: .1 W; Infrared (IR) Range: YES; Nominal Light Current: 4.3 mA;
QSB363 by Qt Optoelectronics

QSB363

Qt Optoelectronics

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;
QSD122 by Fairchild Semiconductor

QSD122

Fairchild Semiconductor

QSD122 by Fairchild Semiconductor is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.