MTP40N06M by Motorola | Transistors

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Manufacturer	Motorola
Manufacturer's Part Number	MTP40N06M
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 120 A; Terminal Finish: TIN LEAD;
Datasheet	MTP40N06M Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	80 ns
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	120 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	5
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	160 ns
JESD-30 Code:	R-PSFM-T5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	125 W
Maximum Drain-Source On Resistance:	.04 ohm
Maximum Feedback Capacitance (Crss):	400 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	CURRENT SENSING
Maximum Drain Current (Abs) (ID):	40 A

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