MGJ2D122005SC by Murata Manufacturing | Other Function Semiconductors

Image shown is a representation only.

Manufacturer	Murata Manufacturing
Manufacturer's Part Number	MGJ2D122005SC
Description	DC-DC REGULATED POWER SUPPLY MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 5; Package Shape: RECTANGULAR; Surface Mount: NO; Technology: HYBRID;
Datasheet	MGJ2D122005SC Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Nominal Output Voltage:	20 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Trim or Adjustable Output (V):	NO
Width (mm):	9.95 mm
Maximum Seated Height:	12.65 mm
Maximum Total Power Output:	2 W
Surface Mount:	NO
No. of Outputs:	2
No. of Terminals:	5
Terminal Position:	SINGLE
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Maximum Load Regulation:	8 %
Technology:	HYBRID
JESD-30 Code:	R-XSMA-T5
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	100 Cel
Minimum Input Voltage:	10.8 V
Maximum Input Voltage:	13.2 V
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Nominal Input Voltage:	12 V
Other IC type:	DC-DC REGULATED POWER SUPPLY MODULE
Length:	19.65 mm
Additional Features:	ADDITIONAL -5V OUTPUT AVAILABLE; LG-MAX; WD-MAX
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	2.54 mm
Temperature Grade:	INDUSTRIAL

Popular Products

Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.

ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

SS495A-SP by Honeywell is a magnetic field sensor with 10.5V max supply voltage, 3" body width, and 1.5% linearity. Ideal for applications requiring a Hall effect sensor with -40 to 150°C operating temperature range, such as position sensing in automotive or industrial systems.