LM5060Q1MMX/NOPB by National Semiconductor | Other Function Semiconductors

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Manufacturer	National Semiconductor
Manufacturer's Part Number	LM5060Q1MMX/NOPB
Description	Power Management Circuits; No. of Terminals: 10; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES; Package Equivalence Code: TSSOP10,.19,20;
Datasheet	LM5060Q1MMX/NOPB Datasheet
In Stock	10,652

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Sub-Category:	Power Management Circuits
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	10
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP10,.19,20
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
JESD-30 Code:	R-PDSO-G10
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Peak Reflow Temperature (C):	260
Package Code:	TSSOP
Nominal Supply Voltage (Vsup):	14 V
Terminal Pitch:	.5 mm
Power Supplies (V):	14
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
10,652	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;

Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;

CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;