New Jersey Semiconductor Products - 2SB817E

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2SB817E by New Jersey Semiconductor Products

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Manufacturer New Jersey Semiconductor Products
Manufacturer's Part Number 2SB817E
Description Power Bipolar Transistors;
Datasheet 2SB817E Datasheet
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JANTX2N3055 by Powertech

JANTX2N3055

Powertech

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Shape: ROUND; Qualification: Not Qualified;
ULN2803LW by Sanken Electric

ULN2803LW

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Terminal Position: DUAL;
TIP32C by Microsemi

TIP32C

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V; JESD-30 Code: R-PSFM-T2;
TIP112 by Fairchild Semiconductor

TIP112

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP47 by Central Semiconductor

TIP47

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BDX53C by New Jersey Semiconductor Products

BDX53C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1; Transistor Element Material: SILICON;
TIP117 by Micro Commercial Components

TIP117

Micro Commercial Components

Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
TIP122 by Bourns

TIP122

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
TIP36C by Mospec Semiconductor

TIP36C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MJ11015G by New Jersey Semiconductor Products

MJ11015G

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 30 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 120 V;
TIP29C by Bourns

TIP29C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
TIP36C by Continental Device India

TIP36C

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP35C by Microsemi

TIP35C

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Element Material: SILICON;
2N3055 by Hi-tron Semiconductor

2N3055

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD679 by New Jersey Semiconductor Products

BD679

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 80 V; Transistor Element Material: SILICON; No. of Elements: 1;
TIP42C by Microsemi

TIP42C

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15; JEDEC-95 Code: TO-220; Package Body Material: PLASTIC/EPOXY;
TIP31CG by Onsemi

TIP31CG

Onsemi

TIP31CG by Onsemi is a NPN power BJT with 30W max power dissipation, 100V max collector-emitter voltage, and 3A max collector current. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. Its through-hole terminal form makes it suitable for various electronic designs.
TIP32C by Central Semiconductor

TIP32C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP127 by Nte Electronics

TIP127

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Peak Reflow Temperature (C): NOT SPECIFIED;
BCP5616 by Rectron

BCP5616

Rectron

Rectron's BCP5616 is a NPN BJT transistor with VCEsat of 0.5V, hFE of 25, and IC of 1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates up to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.