New Jersey Semiconductor Products - 2SC5200

  1. Home
  2. New Jersey Semiconductor Products - 2SC5200
2SC5200 by New Jersey Semiconductor Products

Image shown is a representation only.

Manufacturer New Jersey Semiconductor Products
Manufacturer's Part Number 2SC5200
Description NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet 2SC5200 Datasheet
In Stock77
NAME DESCRIPTION
Nominal Transition Frequency (fT): 30 MHz
Maximum Collector Current (IC): 15 A
Maximum Collector-Emitter Voltage: 230 V
Configuration: SINGLE
Transistor Element Material: SILICON
No. of Elements: 1
Polarity or Channel Type: NPN
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
77 - -

Popular Products

Category Top Products

TIP142 by Fairchild Semiconductor

TIP142

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
TIP42A by New Jersey Semiconductor Products

TIP42A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
BCP56-16 by Zetex Plc

BCP56-16

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
MJD127G by Onsemi

MJD127G

Onsemi

MJD127G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode and resistor. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. Ideal for switching applications in small outline packages, it operates up to 150°C with a transition frequency of 4MHz.
TIP147T by Baneasa S A

TIP147T

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Terminal Position: SINGLE;
MJD44H11-1G by Onsemi

MJD44H11-1G

Onsemi

MJD44H11-1G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is IN-LINE with through-hole terminals in a rectangular shape.
MJD127T4 by STMicroelectronics

MJD127T4

STMicroelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; No. of Terminals: 2;
TIP125 by Semiconductors

TIP125

Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
BD13910S by Fairchild Semiconductor

BD13910S

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
ULN2803AN by Texas Instruments

ULN2803AN

Texas Instruments

ULN2803AN by Texas Instruments is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.5A, and operates up to 150°C. The package style is in-line with through-hole terminals for easy installation.
TIP110 by Continental Device India

TIP110

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 50 W;
TIP36C by Asi Semiconductor

TIP36C

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP110 by Onsemi

TIP110

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
BCP56-16T3G by Onsemi

BCP56-16T3G

Onsemi

BCP56-16T3G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating b/w -55 to 150°C, it offers high DC current gain and can handle up to 1.5W power dissipation.
BD140 by Baneasa S A

BD140

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
TIP142 by Texas Instruments

TIP142

Texas Instruments

TIP142 by Texas Instruments is a NPN power BJT with 125W max power dissipation, 10A max collector current, and 150°C max operating temp. Ideal for high-power applications like motor control and industrial automation due to its Darlington configuration with built-in resistor.
NJVMJD44H11T4G-VF01 by Onsemi

NJVMJD44H11T4G-VF01

Onsemi

NJVMJD44H11T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 40, VCE of 80V, and IC of 8A. Ideal for switching applications, it operates b/w -65 to 150°C. This small outline package with Gull Wing terminals is surface mountable and AEC-Q101 compliant.
BDW93C by Bourns

BDW93C

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 12 A; No. of Terminals: 3; No. of Elements: 1;
TIP127 by Changzhou Galaxy Century Microelectronics

TIP127

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
TIP112 by Baneasa S A

TIP112

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;