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Manufacturer | New Jersey Semiconductor Products |
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Manufacturer's Part Number | BLF177 |
Description | N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE; |
Datasheet | BLF177 Datasheet |
In Stock | 17,870 |
NAME | DESCRIPTION |
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Minimum DS Breakdown Voltage: | 125 V |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
Maximum Drain Current (ID): | 16 A |
Polarity or Channel Type: | N-CHANNEL |