New Jersey Semiconductor Products - BLF177

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BLF177 by New Jersey Semiconductor Products

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Manufacturer New Jersey Semiconductor Products
Manufacturer's Part Number BLF177
Description N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
Datasheet BLF177 Datasheet
In Stock17,870
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 125 V
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Drain Current (ID): 16 A
Polarity or Channel Type: N-CHANNEL
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