Nexperia - 2N7002PV,115

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2N7002PV,115 by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number 2N7002PV,115
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: 1.6 ohm;
Datasheet 2N7002PV,115 Datasheet
In Stock107,364
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .35 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.6 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 568-5986-1
568-5986-2
1727-4792-2
2N7002PV,115-ND
934064136115
1727-4792-1
1727-4792-6
5202-2N7002PV,115TR
568-5986-2-ND
568-5986-1-ND
568-5986-6
568-5986-6-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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