Nexperia - 934070723135

  1. Home
  2. Nexperia - 934070723135
934070723135 by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number 934070723135
Description Power Bipolar Transistors;
Datasheet 934070723135 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP120 by Baneasa S A

TIP120

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR; No. of Elements: 1;
BDW93C by Central Semiconductor

BDW93C

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP31C by Central Semiconductor

TIP31C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BDW93C by STMicroelectronics

BDW93C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB;
TIP120 by Semiconductors

TIP120

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP120 by Swampscott Electronics

TIP120

Swampscott Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
ULN2804APG by Toshiba

ULN2804APG

Toshiba

Toshiba's ULN2804APG is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a min DC current gain of 1000x, it can handle up to 0.5A collector current at 50V collector-emitter voltage. This through-hole package with 18 terminals is made of silicon material in a rectangular shape.
TIP31C by Fairchild Semiconductor

TIP31C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP147T by STMicroelectronics

TIP147T

STMicroelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Form: THROUGH-HOLE;
BD140-16 by Samsung

BD140-16

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
BD138 by Fairchild Semiconductor

BD138

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;
TIP32CG by Onsemi

TIP32CG

Onsemi

TIP32CG by Onsemi is a PNP power BJT with 3A max collector current, 40W power dissipation, and 100V max collector-emitter voltage. Ideal for switching applications, it has a min hFE of 10 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals.
TIP41C by Baneasa S A

TIP41C

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Terminal Form: THROUGH-HOLE; Package Style (Meter): FLANGE MOUNT;
TIP125 by Diotec Semiconductor Ag

TIP125

Diotec Semiconductor Ag

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
TIP41CTU by Fairchild Semiconductor

TIP41CTU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD243C by Crimson Semiconductor

BD243C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-PSFM-T3;
MJD127T4G by Onsemi

MJD127T4G

Onsemi

MJD127T4G by Onsemi is a PNP BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, collector current of 8A, and power dissipation of 20W. With a transition frequency of 4MHz, it operates b/w -65 to 150°C making it suitable for various power control circuits.
JAN2N3055 by M/a-com Technology Solutions

JAN2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Minimum DC Current Gain (hFE): 5;
TIP50 by Fairchild Semiconductor

TIP50

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP41C by Semiconductors

TIP41C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;