Nexperia - 934070763115

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934070763115 by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number 934070763115
Description Power Bipolar Transistors;
Datasheet 934070763115 Datasheet
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TIP120 by Mospec Semiconductor

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V;
BD138 by Central Semiconductor

BD138

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP32C by Kec

TIP32C

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2N3055 by Taitron Components

2N3055

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3055 by Aeroflex/metelics

2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5; Package Body Material: METAL;
TIP50 by Rochester Electronics

TIP50

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
2SC5200RTU by Onsemi

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Onsemi

The Onsemi 2SC5200RTU is a NPN power BJT with max. collector-emitter voltage of 250V, ideal for amplifier applications. Featuring a max. power dissipation of 150W and max. collector current of 17A, it operates at up to 150°C. With a min DC current gain of 55 and transition frequency of 30MHz, this transistor offers high performance in a flange mount package for through-hole mounting.
TIP50 by Mospec Semiconductor

TIP50

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP35C by Continental Device India

TIP35C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MJD340T4 by Motorola

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Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
TIP120 by Panasonic

TIP120

Panasonic

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP47 by Tt Electronics Plc

TIP47

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
TIP112 by General Transistor

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2SC5200 by STMicroelectronics

2SC5200

STMicroelectronics

2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.
BUX87 by NXP Semiconductors

BUX87

NXP Semiconductors

The NXP Semiconductors BUX87 is a single NPN power BJT transistor with a max VCEsat of 1V, ideal for switching applications. With a max collector-emitter voltage of 450V and a max power dissipation of 20W, it operates at temperatures up to 150°C. This silicon-based transistor has a min DC current gain of 26 and can handle a max collector current of 0.5A.
TIP50 by NXP Semiconductors

TIP50

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Collector Current (IC): 1 A; Maximum VCEsat: 1 V;
TIP41C by Central Semiconductor

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Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
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Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
MJ15015G by Onsemi

MJ15015G

Onsemi

The Onsemi MJ15015G is a PNP BJT transistor with 180W power dissipation, 120V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a min hFE of 5 and operates up to 200°C. The package style is flange mount with a round shape and matte tin finish on the bottom terminal.
2N3055 by Continental Device India

2N3055

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;