Nexperia - 934070763135

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934070763135 by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number 934070763135
Description Power Bipolar Transistors;
Datasheet 934070763135 Datasheet
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TIP35C by Comset Semiconductors

TIP35C

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP142 by Bourns

TIP142

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
MJD45H11G by Onsemi

MJD45H11G

Onsemi

The Onsemi MJD45H11G is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates b/w -55 to 150°C. The Gull Wing package style makes it suitable for surface mount designs.
TIP122 by Asi Semiconductor

TIP122

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): 8 A; JEDEC-95 Code: TO-220AB;
ZTX951 by Zetex Plc

ZTX951

Zetex Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 10;
TIP36C by Nte Electronics

TIP36C

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 100 V;
BD139 by Central Semiconductor

BD139

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
ULN2064B by STMicroelectronics

ULN2064B

STMicroelectronics

STMicroelectronics ULN2064B is a 4-bank NPN BJT with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.4V, max IC of 1.75A, and VCE of 35V. Packaged in PLASTIC/EPOXY material with 16 terminals in RECTANGULAR shape for THROUGH-HOLE mounting.
TIP110 by Central Semiconductor

TIP110

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP111 by Texas Instruments

TIP111

Texas Instruments

TIP111 by Texas Instruments is a NPN Darlington BJT with max power dissipation of 50W. It has min hFE of 500 and max VCE of 80V, ideal for high-power applications in flange mount packages. Suitable for switching and amplification tasks due to its silicon transistor element material and single terminal position.
MJD44H11T4G by Onsemi

MJD44H11T4G

Onsemi

MJD44H11T4G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150°C. Its small outline package makes it suitable for surface mount designs.
ZTX851 by Zetex Plc

ZTX851

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
BD243C by Onsemi

BD243C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP50 by Onsemi

TIP50

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
ULN2002AN by Texas Instruments

ULN2002AN

Texas Instruments

ULN2002AN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon element material.
2N3055 by Continental Device India

2N3055

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3055H by Crimson Semiconductor

2N3055H

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 60 V;
2N4401T&A by Continental Device India

2N4401T&A

Continental Device India

2N4401T&A by Continental Device India is a NPN BJT transistor with max VCEsat of 0.75V, hFE of 40, and IC of 0.6A. Ideal for switching applications due to fast rise time (tr) of 20ns and fall time (tf) of 30ns. Operates in temp range -55 to 150 °C with max power dissipation of 1.5W.
BD243C by Crimson Semiconductor

BD243C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-PSFM-T3;
TIP41C by Weitron Technology

TIP41C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;