Nexperia - BC54-10PAS-Q

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BC54-10PAS-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BC54-10PAS-Q
Description Power Bipolar Transistors;
Datasheet BC54-10PAS-Q Datasheet
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TIP125 by New Jersey Semiconductor Products

TIP125

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP117 by General Transistor

TIP117

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PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BDW93C by Onsemi

BDW93C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
TIP120 by Semitronics

TIP120

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
BD139G by Onsemi

BD139G

Onsemi

The Onsemi BD139G is a NPN BJT transistor with max. power dissipation of 12.5W, hFE of 25, and max. collector current of 1.5A. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 80V, operating up to 150°C in a rectangular package style with through-hole terminals.
BD140 by Continental Device India

BD140

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MJE340 by General Transistor

MJE340

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
JANTX2N3055 by M/a-com Technology Solutions

JANTX2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 2; Case Connection: COLLECTOR;
TIP29C by Crimson Semiconductor

TIP29C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP47 by Central Semiconductor

TIP47

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP41C by Bourns

TIP41C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
TIP122FP by STMicroelectronics

TIP122FP

STMicroelectronics

TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.
TIP115 by Taitron Components

TIP115

Taitron Components

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;
2N3055 by SPC TECHNOLOGY/ MULTICOMP

2N3055

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG;
TIP120 by New Jersey Semiconductor Products

TIP120

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 1000; Maximum Collector-Emitter Voltage: 60 V;
TIP122 by Texas Instruments

TIP122

Texas Instruments

TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.
TIP115 by Onsemi

TIP115

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: TIN;
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MJD122T4

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The Onsemi MJD122T4 is a NPN Darlington BJT with built-in diode and resistor, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and peak reflow temp of 235°C, it offers high power dissipation up to 20W in a compact rectangular shape.
TIP3055 by Mospec Semiconductor

TIP3055

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP42A by Baneasa S A

TIP42A

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;