Nexperia - BC817RAZ

  1. Home
  2. Nexperia - BC817RAZ
BC817RAZ by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number BC817RAZ
Description Small Signal Bipolar Transistors; Terminal Finish: TIN; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
Datasheet BC817RAZ Datasheet
NAME DESCRIPTION
Other Names: 1727-7383-6
BC817RAZ-ND
5202-BC817RAZTR
1727-7383-2
1727-7383-1
934070165147
Maximum Time At Peak Reflow Temperature (s): 30
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3904LT1HTSA1 by Infineon Technologies

MMBT3904LT1HTSA1

Infineon Technologies

Infineon's MMBT3904LT1HTSA1 is a NPN BJT transistor with hFE of 30, VCE of 40V, and fT of 300MHz. Ideal for switching applications, it has a max IC of 0.2A and ton/toff times of 70ns/250ns. Its GULL WING terminals make it suitable for surface mount configurations in small outline packages.
MMBT3906 by Changzhou Galaxy Century Microelectronics

MMBT3906

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BC547C by Vishay Semiconductors

BC547C

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
2N2222A by Micro Electronics

2N2222A

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847C by Weitron Technology

BC847C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222A by Silicon Transistor

2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222A by Swampscott Electronics

2N2222A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2219A by Texas Instruments

2N2219A

Texas Instruments

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).
BC817-40 by Taiwan Semiconductor

BC817-40

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
SBC807-40LT1G by Onsemi

SBC807-40LT1G

Onsemi

SBC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. It has VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.
2N2905A by Motorola

2N2905A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 200 Cel;
2N2222AUB by Optek Technology

2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847BPN,115 by Nexperia

BC847BPN,115

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
2N2905A by Electronic Transistors

2N2905A

Electronic Transistors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by Weitronic Enterprise

MMBT2222A

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC847C,235 by Nexperia

BC847C,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Micro Commercial Components

MMBT3906

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;
MMBT2222AT-7-F by Diodes Incorporated

MMBT2222AT-7-F

Diodes Incorporated

Diodes Inc.'s MMBT2222AT-7-F is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 300MHz and compact SOT package design for surface mounting.
2N3904-AP by Micro Commercial Components

2N3904-AP

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): 10;
2N3906 by Minilogic Device

2N3906

Minilogic Device

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;