Nexperia - BC847C/AU

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BC847C/AU by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BC847C/AU
Description Small Signal Bipolar Transistors;
Datasheet BC847C/AU Datasheet
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2N2222A by ROHM

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
MMBT3906 by National Semiconductor

MMBT3906

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PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC847BW,115 by Nexperia

BC847BW,115

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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum Operating Temperature: -65 Cel;
2N2907A by International Devices

2N2907A

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC817-25W-7 by Diodes Incorporated

BC817-25W-7

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BC817-25W-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 45V, max collector current of 0.5A, and min DC current gain of 100. With a package style of small outline and peak reflow temp of 260°C, it's ideal for compact electronic devices requiring high-speed performance.
MMBT3906 by STMicroelectronics

MMBT3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Rectron

MMBT2222A

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
MBT3904DW1T1G by Onsemi

MBT3904DW1T1G

Onsemi

MBT3904DW1T1G by Onsemi is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 300MHz.
BC817-40 by STMicroelectronics

BC817-40

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
BC547C by Forward International Electronics

BC547C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
BC847B,235 by NXP Semiconductors

BC847B,235

NXP Semiconductors

NXP Semiconductors' BC847B,235 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 200, it operates at max 150°C with IC of 0.1A. Its small outline package has GULL WING terminals and can handle up to 45V.
MMBT3906 by Nte Electronics

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Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: AMPLIFIER;
JANTX2N2222A by Microchip Technology

JANTX2N2222A

Microchip Technology

JANTX2N2222A by Microchip Tech is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications due to fast ton of 35ns and toff of 300ns. Operates in temp range -65°C to 200°C, complies with MIL-19500/255 standard.
BC847B by Central Semiconductor

BC847B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC846B by Rectron

BC846B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
BC817-40QAZ by Nexperia

BC817-40QAZ

Nexperia

Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
MMBT2222A by Micro Commercial Components

MMBT2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
2N2219A by National Semiconductor

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National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .5 A;
BC847B-7-F by Diodes Incorporated

BC847B-7-F

Diodes Incorporated

Diodes Inc. BC847B-7-F is a NPN BJT transistor with wing terminals, 200 min hFE, and 45V VCEO. It's used for switching applications in small outline packages with 300MHz fT.
2N2905A by Asi Semiconductor

2N2905A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;