Nexperia - BCP53-10H-Q

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BCP53-10H-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BCP53-10H-Q
Description Power Bipolar Transistors;
Datasheet BCP53-10H-Q Datasheet
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2N3055 by Api Technologies

2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 60 V;
BCX5316TA by Diodes Incorporated

BCX5316TA

Diodes Incorporated

BCX5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 100, and max IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.
MJD44H11T4 by Onsemi

MJD44H11T4

Onsemi

MJD44H11T4 by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 80V, max collector current of 8A, and min DC current gain of 40. With a package style of small outline, it operates up to 140°C and features Gull Wing terminals for surface mount assembly.
BUX87 by STMicroelectronics

BUX87

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
BD13916STU by Onsemi

BD13916STU

Onsemi

BD13916STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 12.5W Ptot. Ideal for switching applications, it has hFE of min. 100 and operates up to 150°C. The package is through-hole with matte tin finish, suitable for flange mount configurations.
TIP111 by Motorola

TIP111

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP127 by Power Innovations

TIP127

Power Innovations

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Case Connection: COLLECTOR; Terminal Position: SINGLE;
TIP31C by Bourns

TIP31C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;
TIP127FP by New Jersey Semiconductor Products

TIP127FP

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON; No. of Elements: 1;
JAN2N3055 by Microchip Technology

JAN2N3055

Microchip Technology

JAN2N3055 by Microchip Tech is a NPN BJT transistor with max. collector-emitter voltage of 70V, max. collector current of 15A, and min. DC current gain of 20. It's used for switching applications in military standards like MIL-19500/407D, featuring a round package style with flange mount and tin lead terminal finish.
BDW93C by Onsemi

BDW93C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
TIP112 by Central Semiconductor

TIP112

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
2SC5200-O by Toshiba

2SC5200-O

Toshiba

Toshiba's 2SC5200-O is a NPN BJT transistor with max VCEsat of 3V, hFE of 80, and IC of 15A. Ideal for amplifier applications due to its max power dissipation of 150W and collector-emitter voltage of 230V. Suitable for high-power audio amplifiers or industrial equipment requiring robust performance in a rectangular package style.
BCP56-16T3G by Onsemi

BCP56-16T3G

Onsemi

BCP56-16T3G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating b/w -55 to 150°C, it offers high DC current gain and can handle up to 1.5W power dissipation.
MJD44H11J by Nexperia

MJD44H11J

Nexperia

MJD44H11J by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 1V, max collector-emitter voltage of 80V, and max collector current of 8A. With a small outline package style, it operates b/w -55 to 150°C and offers a transition frequency of 160MHz.
TIP3055 by Bourns

TIP3055

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
TIP127 by Samsung

TIP127

Samsung

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB;
BD679 by Crimson Semiconductor

BD679

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 4 A; Maximum VCEsat: 2.5 V;
BD679AS by Fairchild Semiconductor

BD679AS

Fairchild Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP42C by Fairchild Semiconductor

TIP42C

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;