Nexperia - BCP53-16H-Q

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BCP53-16H-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BCP53-16H-Q
Description Power Bipolar Transistors;
Datasheet BCP53-16H-Q Datasheet
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BD1396STU by Fairchild Semiconductor

BD1396STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP32C by Diotec Semiconductor Ag

TIP32C

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP41C by Kec

TIP41C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP127 by Changzhou Galaxy Century Microelectronics

TIP127

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PSFM-T3;
TIP147T by Central Semiconductor

TIP147T

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;
TIP127FP by STMicroelectronics

TIP127FP

STMicroelectronics

TIP127FP by STMicroelectronics is a PNP power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, collector current of 5A, and DC current gain of 1000. With a package style of flange mount and max operating temperature of 150°C, it offers efficient performance in various electronic circuits.
TIP120 by Mospec Semiconductor

TIP120

Mospec Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V;
TIP111 by Baneasa S A

TIP111

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
MJD44H11T4 by Motorola

MJD44H11T4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
TIP47 by Mospec Semiconductor

TIP47

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD139 by Fairchild Semiconductor

BD139

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2SC5200RTU by Onsemi

2SC5200RTU

Onsemi

The Onsemi 2SC5200RTU is a NPN power BJT with max. collector-emitter voltage of 250V, ideal for amplifier applications. Featuring a max. power dissipation of 150W and max. collector current of 17A, it operates at up to 150°C. With a min DC current gain of 55 and transition frequency of 30MHz, this transistor offers high performance in a flange mount package for through-hole mounting.
TIP120 by Diotec Semiconductor Ag

TIP120

Diotec Semiconductor Ag

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Moisture Sensitivity Level (MSL): 1; Terminal Form: THROUGH-HOLE;
2N3055 by Micro Commercial Components

2N3055

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: METAL;
TIP50 by Power Innovations

TIP50

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
ULN2003ADRG3 by Texas Instruments

ULN2003ADRG3

Texas Instruments

ULN2003ADRG3 by Texas Instruments is a NPN BJT transistor with 7 elements, 16 terminals, and max. Vce of 50V. It is used for switching applications in surface mount designs due to its complex configuration and silicon element material.
TIP42C by Fairchild Semiconductor

TIP42C

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP142T by Baneasa S A

TIP142T

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
MJD127G by Onsemi

MJD127G

Onsemi

MJD127G by Onsemi is a PNP power BJT with Darlington configuration, built-in diode and resistor. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. Ideal for switching applications in small outline packages, it operates up to 150°C with a transition frequency of 4MHz.
TIP29C by Power Innovations

TIP29C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;