Nexperia - BCP56F

  1. Home
  2. Nexperia - BCP56F
BCP56F by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number BCP56F
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;
Datasheet BCP56F Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: 568-13320-6
2156-BCP56F
1727-2753-6
568-13320-2-ND
5202-BCP56FTR
933917240135
1727-2753-2
568-13320-2
568-13320-6-ND
568-13320-1-ND
1727-2753-1
568-13320-1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 40
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 80 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ULN2803LW by Vishay Intertechnology

ULN2803LW

Vishay Intertechnology

Vishay Intertechnology's ULN2803LW is an NPN BJT transistor with 8 elements and 18 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and operates b/w -20 to 85°C. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.
SMBT3904DW1T1G by Onsemi

SMBT3904DW1T1G

Onsemi

SMBT3904DW1T1G by Onsemi is a NPN BJT with hFE of 100, fT of 300 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.
2N2222AUB by Aeroflex/metelics

2N2222AUB

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DC Current Gain (hFE): 100;
BC817-25 by Diodes Incorporated

BC817-25

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT2222A by Bytesonic Electronics

MMBT2222A

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
BC547CBU by Onsemi

BC547CBU

Onsemi

BC547CBU by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 45V, and IC of 0.1A. Ideal for switching applications, it has a max power dissipation of 0.625W and operates up to 150°C. Its through-hole package makes it suitable for various electronic circuits.
2N2222AUA by M/a-com Technology Solutions

2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Form: NO LEAD;
2N3904-AP by Micro Commercial Components

2N3904-AP

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): 10;
JANTX2N2222A by Onsemi

JANTX2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Rochester Electronics

MMBT3904

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
BC847C,215 by Nexperia

BC847C,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2907AWT1G by Onsemi

MMBT2907AWT1G

Onsemi

MMBT2907AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.15W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications, it has a min. DC current gain of 50 and operates at up to 150°C, making it suitable for various electronic circuits.
MMBT3906 by Onsemi

MMBT3906

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222AUA by Defense Logistics Agency

JANTX2N2222AUA

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; No. of Elements: 1;
BC846A,215 by NXP Semiconductors

BC846A,215

NXP Semiconductors

BC846A,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and a min DC current gain of 110 (hFE). With a max operating temperature of 150°C, it is suitable for small outline surface mount packages.
BC817-25 by National Semiconductor

BC817-25

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3904 by Itt Semiconductor

2N3904

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Yangzhou Yangjie Electronics

MMBT2222A

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
MMBT2222A by Microsemi

MMBT2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;