NHUMD13 by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	NHUMD13
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
Datasheet	NHUMD13 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	170 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN AND PNP
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	80 V
Additional Features:	BUILT IN BAIS RESISTOR RATIO IS 10
Maximum Collector-Base Capacitance:	2.5 pF
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.1 V

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