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Manufacturer | Nexperia |
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Manufacturer's Part Number | NX1029XH |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON; |
Datasheet | NX1029XH Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 4 pF |
Maximum Drain Current (ID): | .33 A |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | YES |
Minimum Operating Temperature: | -55 Cel |
No. of Terminals: | 6 |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Power Dissipation (Abs): | .5 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Operating Temperature: | 150 Cel |
Reference Standard: | AEC-Q101; IEC-60134 |
Maximum Drain-Source On Resistance: | 1.6 ohm |