Nexperia - PBHV8115Z,135

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector-Base Capacitance: 8 pF; Package Style (Meter): CYLINDRICAL;

MMBT3904TT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance in small outline packages.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;

MMBT5551LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 30, and IC of 0.06A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 160V. Its small outline package makes it suitable for surface mount designs.

SMBT2222AE6327HTSA1 by Infineon is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers fast turn-on/off times of 35ns/285ns.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

BC817-25LT3G by Onsemi is a NPN BJT transistor with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its 0.5A IC and 0.3W Ptot capabilities. Its GULL WING terminals and SOT package make it suitable for surface mount PCB designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum Operating Temperature: -55 Cel;

BC547C by Diotec Semiconductor Ag is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.1A. It has a min DC current gain of 420 and can operate at temperatures up to 150°C. This transistor is commonly used in applications requiring low power dissipation and high frequency performance, such as audio amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;

BC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, DC current gain of 200, and operates up to 150°C. This small outline transistor in gull wing package offers high performance in compact designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;

MMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package makes it suitable for surface mount designs requiring a single configuration.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 50 V;

MMBT3904LT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package with gull wing terminals makes it suitable for surface mount designs.