Nexperia - PBSS302NZ-Q

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PBSS302NZ-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PBSS302NZ-Q
Description Power Bipolar Transistors;
Datasheet PBSS302NZ-Q Datasheet
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TIP115

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PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT; JESD-609 Code: e3;
TIP120 by Continental Device India

TIP120

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP115G by Onsemi

TIP115G

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TIP115G by Onsemi is a PNP power BJT with 50W max power dissipation, hFE of 500, and 60V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
BD140-16 by Central Semiconductor

BD140-16

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
TIP42C by Rectron

TIP42C

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PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD140 by Continental Device India

BD140

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
ULN2803APG by Toshiba

ULN2803APG

Toshiba

Toshiba's ULN2803APG is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include hFE of 1000, VCE of 50V, and IC of 0.5A. The package style is in-line with 18 terminals in a rectangular shape.
BD679 by Baneasa S A

BD679

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
TIP50 by Onsemi

TIP50

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP111 by Baneasa S A

TIP111

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;
BD140 by Central Semiconductor

BD140

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP112 by Semiconductors

TIP112

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;
BDW93C by SPC TECHNOLOGY/ MULTICOMP

BDW93C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
TIP127 by Semiconductors

TIP127

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;
TIP31C by Power Innovations

TIP31C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Case Connection: COLLECTOR; JESD-30 Code: R-PSFM-T3;
BD679A by STMicroelectronics

BD679A

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP31C by Micro Commercial Components

TIP31C

Micro Commercial Components

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MJE340

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;
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MJD45H11T4

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
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ULN2003AN

Texas Instruments

ULN2003AN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon element material.