Nexperia - PBSS4330PASX

  1. Home
  2. Nexperia - PBSS4330PASX
PBSS4330PASX by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PBSS4330PASX
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 210 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: TIN;
Datasheet PBSS4330PASX Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 210 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 3 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: 934068106115
568-12681-1-ND
568-12681-2-ND
568-12681-6-ND
5202-PBSS4330PASXTR
568-12681-1
568-12681-2
1727-2382-6
568-12681-6
1727-2382-2
1727-2382-1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 180
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 30 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817-16LT1G by Onsemi

BC817-16LT1G

Onsemi

BC817-16LT1G by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.3W. It has a min DC current gain of 100, operates at temperatures up to 150°C, and can handle a max collector-emitter voltage of 45V. This small outline transistor is ideal for applications requiring high frequency transitions up to 100MHz in surface mount configurations.
MMBT2907A by General Semiconductor

MMBT2907A

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N3906 by ROHM

2N3906

ROHM

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3904 by Electronic Devices

MMBT3904

Electronic Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
BC846B by Formosa Microsemi

BC846B

Formosa Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 65 V;
2N3904 by Micro Commercial Components

2N3904

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .2 A;
BC856B,215 by Nexperia

BC856B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC846B by Rectron

BC846B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
MMBT3906 by Jiangsu Changjiang Electronics Technology

MMBT3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 30;
BC847CE6327HTSA1 by Infineon Technologies

BC847CE6327HTSA1

Infineon Technologies

BC847CE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 420. It has Vce of 45V and Ic of 0.1A, suitable for switching applications. This surface mount device comes in a small outline package with Gull Wing terminals, ideal for high-frequency operations up to 250MHz.
BC847C by Dc Components

BC847C

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Taiwan Semiconductor

BC817-40

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC817-25 by Continental Device India

BC817-25

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT2222A by Kodenshi Auk

MMBT2222A

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;
BC846B by Weitron Technology

BC846B

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Infineon Technologies

BC817-40

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT3904-7-F by Diodes Incorporated

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
2N2907A by Nte Electronics

2N2907A

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Minimum DC Current Gain (hFE): 50;
2N2222AUA by Silicon Transistor

2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;