Nexperia - PBSS5240ZF

  1. Home
  2. Nexperia - PBSS5240ZF
PBSS5240ZF by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PBSS5240ZF
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 2 A; Moisture Sensitivity Level (MSL): 1;
Datasheet PBSS5240ZF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: 1727-2338-6-ND
568-12634-2-ND
1727-PBSS5240ZFTR
568-12634-1-ND
1727-2338-6
568-12634-6-ND
1727-2338-2
1727-2338-1
568-12634-6
1727-PBSS5240ZFDKR
PBSS5240ZF-ND
1727-PBSS5240ZFCT
934068447135
1727-2338-1-ND
1727-2338-2-ND
568-12634-1
5202-PBSS5240ZFTR
568-12634-2
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 300
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 40 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3904 by Infineon Technologies

MMBT3904

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .2 A;
BC847C by Diodes Incorporated

BC847C

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2219A by Texas Instruments

2N2219A

Texas Instruments

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).
JANTX2N2222AUA/TR by Microsemi

JANTX2N2222AUA/TR

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Terminal Position: DUAL;
2N2219A by International Devices

2N2219A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUA by Optek Technology

JANTX2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUB by Semicoa

JANTX2N2222AUB

Semicoa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847BV,115 by NXP Semiconductors

BC847BV,115

NXP Semiconductors

BC847BV,115 by NXP Semiconductors is a NPN BJT with 2 elements for switching applications. Features include hFE of 200, VCE of 45V, and IC of 0.1A. It comes in a small outline package suitable for surface mount technology.
2N2222AUB by Cobham Plc

2N2222AUB

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDSO-N3; Minimum DC Current Gain (hFE): 100;
SMMBTA42LT1G by Onsemi

SMMBTA42LT1G

Onsemi

SMMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp.
MMBT2907AWT1G by Rochester Electronics

MMBT2907AWT1G

Rochester Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
BC547-B by Siemens

BC547-B

Siemens

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847-C by Samsung

BC847-C

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
BC547B by Fairchild Semiconductor

BC547B

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2219A by New England Semiconductor

2N2219A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC846B by Vishay Semiconductors

BC846B

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
BC547B by Onsemi

BC547B

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by Onsemi

MMBT2907A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .8 A;
BC846B by Lite-on Semiconductor

BC846B

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.