Nexperia - PBSS5255PAPSX

  1. Home
  2. Nexperia - PBSS5255PAPSX
PBSS5255PAPSX by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PBSS5255PAPSX
Description PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 50;
Datasheet PBSS5255PAPSX Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 55 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Reference Standard: AEC-Q101; IEC-60134
Case Connection: COLLECTOR
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817-25 by Nexperia

BC817-25

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 160;
SMMBT3904LT3G by Onsemi

SMMBT3904LT3G

Onsemi

SMMBT3904LT3G by Onsemi is a NPN BJT with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and compact SMALL OUTLINE package. With hFE of 30, it offers reliable performance at up to 150°C operating temperature.
2N2905A by Micro Electronics

2N2905A

Micro Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC846A,215 by Nexperia

BC846A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
ULN2003ADR by Texas Instruments

ULN2003ADR

Texas Instruments

ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
2N3906 by Loras Industries

2N3906

Loras Industries

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by NXP Semiconductors

BC817-25

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
SBC817-40LT3G by Good-ark Electronics

SBC817-40LT3G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2905A by Semicoa

2N2905A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
SMBT3904E6327HTSA1 by Infineon Technologies

SMBT3904E6327HTSA1

Infineon Technologies

Infineon's SMBT3904E6327HTSA1 is a NPN BJT transistor with max. power dissipation of 0.33W, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its small outline package style and max. collector-emitter voltage of 40V.
BC847B by National Semiconductor

BC847B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT3904 by Secos

MMBT3904

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;
ZTX653 by Diodes Incorporated

ZTX653

Diodes Incorporated

ZTX653 by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 2A, and transition frequency of 175MHz. It is used in applications requiring high-speed switching such as power supplies and amplifiers due to its silicon element material and single configuration design.
2N3904 by Lite-on Semiconductor

2N3904

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Turn On Time (ton): 70 ns;
2N3906 by Allegro MicroSystems

2N3906

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Onsemi

MMBT2222A

Onsemi

The Onsemi MMBT2222A is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 1A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260°C, it operates b/w -55 to 150°C efficiently.
BC817-40 by General Semiconductor

BC817-40

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
2N3904 by Secos

2N3904

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
MMBT3904 by Nexperia

MMBT3904

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;
JANTX2N2222AUA by Optek Technology

JANTX2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;