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| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | PDTA123ETVL |
| Description | PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-236AB; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1; |
| Datasheet | PDTA123ETVL Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
1727-8519-6 934054696235 1727-8519-2 PDTA123ETVL-ND 2156-PDTA123ETVL-1727 5202-PDTA123ETVLTR 1727-8519-1 |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 30 |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
