Nexperia - PDTC114ET-QR

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PDTC114ET-QR by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PDTC114ET-QR
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
Datasheet PDTC114ET-QR Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 230 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Other Names: 1727-PDTC114ET-QRDKR
1727-PDTC114ET-QR
5202-PDTC114ET-QRTR
1727-PDTC114ET-QRCT
1727-PDTC114ET-QRTR
1727-PDTC114ET-QR-ND
934663630215
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 30
Minimum Operating Temperature: -65 Cel
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum Collector-Base Capacitance: 2.5 pF
Reference Standard: AEC-Q101; IEC-60134
Maximum VCEsat: .1 V
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