Nexperia - PDTC143XQC

  1. Home
  2. Nexperia - PDTC143XQC
PDTC143XQC by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PDTC143XQC
Description Small Signal Bipolar Transistors;
Datasheet PDTC143XQC Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2222A by New Jersey Semiconductor Products

2N2222A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
MMBT3906WT1G by Onsemi

MMBT3906WT1G

Onsemi

MMBT3906WT1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates b/w -55 to 150°C with a max. collector-emitter voltage of 40V and transition frequency of 250MHz.
2N2222A by Taitron Components

2N2222A

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
BC817-25 by Multicomp Pro

BC817-25

Multicomp Pro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Minimum Operating Temperature: -65 Cel;
MMBT2222A by Diodes Incorporated

MMBT2222A

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC847B by Unisonic Technologies

BC847B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Infineon Technologies

BC817-25

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2222A by Silicon Transistor

2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846B,235 by NXP Semiconductors

BC846B,235

NXP Semiconductors

BC846B,235 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and min hFE of 200. With a max operating temperature of 150°C, it can handle up to 0.1A collector current in a small outline package suitable for surface mount technology.
MMBT2222A by National Semiconductor

MMBT2222A

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 1 A;
MMBT3904 by NXP Semiconductors

MMBT3904

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
2N2222A by Vishay Sprague

2N2222A

Vishay Sprague

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
2N2905A by Solid State Devices

2N2905A

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT2222ALT1G by Onsemi

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
MMBT3906LT1HTSA1 by Infineon Technologies

MMBT3906LT1HTSA1

Infineon Technologies

Infineon's MMBT3906LT1HTSA1 is a PNP BJT transistor with 30 min hFE, ideal for switching applications. With a max VCE of 40V and IC of 0.2A, it operates up to 150°C. This surface-mount device has a rectangular package style and Gull Wing terminals, meeting AEC-Q101 standards for automotive use.
MMBT2222A-TP by Micro Commercial Components

MMBT2222A-TP

Micro Commercial Components

MMBT2222A-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.35W, hFE of 75, and operates up to 150°C. Ideal for amplifier applications due to its small outline package style and high transition frequency of 300MHz.
BC847B by Weitronic Enterprise

BC847B

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222A by Cobham Plc

JANTX2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; Package Style (Meter): CYLINDRICAL;
MMBT2907A-7-F by Diodes Incorporated

MMBT2907A-7-F

Diodes Incorporated

Diodes Inc. MMBT2907A-7-F is a PNP BJT transistor with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package.
2N2907A by Good-ark Electronics

2N2907A

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;