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| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | PDTD114EUX |
| Description | NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 70; |
| Datasheet | PDTD114EUX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 225 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .5 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
1727-PDTD114EUXTR PDTD114EUX-ND 1727-PDTD114EUXDKR 1727-PDTD114EUXCT 934068346115 5202-PDTD114EUXTR |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 70 |
| JESD-609 Code: | e3 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Additional Features: | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Peak Reflow Temperature (C): | 260 |
