Nexperia - PHPT60410NYX

  1. Home
  2. Nexperia - PHPT60410NYX
PHPT60410NYX by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PHPT60410NYX
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 128 MHz; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN;
Datasheet PHPT60410NYX Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 128 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 10 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
Other Names: 568-12547-6
NEXNXPPHPT60410NYX
568-12547-6-ND
568-12547-2-ND
568-12547-1-ND
934068581115
568-12547-2
568-12547-1
1727-2261-1
1727-2261-2
2156-PHPT60410NYX-NEX
1727-2261-6
5202-PHPT60410NYXTR
JEDEC-95 Code: MO-235
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 230
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 40 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP31C by New Jersey Semiconductor Products

TIP31C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 3 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON;
TIP42C by Motorola

TIP42C

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP47 by Mospec Semiconductor

TIP47

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP31C by Texas Instruments

TIP31C

Texas Instruments

TIP31C by Texas Instruments is a NPN BJT transistor with 3A IC, 30W Pd, and 100V VCE. Ideal for switching applications due to its single configuration and high hFE of 10. Operates up to 150°C, featuring a rectangular package with through-hole terminals.
BCP56T1G by Onsemi

BCP56T1G

Onsemi

BCP56T1G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 1.5W Ptot. Ideal for amplifier applications, it has hFE of min. 40 and fT of 130MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
TIP50 by Texas Instruments

TIP50

Texas Instruments

TIP50 by Texas Instruments is a NPN BJT transistor with 400V VCE, 1A IC, and 40W Ptot. Ideal for power applications in electronics due to its high voltage and current ratings. Its single configuration and through-hole terminals make it easy to integrate into various circuit designs.
TIP3055 by Bourns

TIP3055

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
BCP56-16 by Good-ark Electronics

BCP56-16

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
SBCP56-16T1G by Onsemi

SBCP56-16T1G

Onsemi

SBCP56-16T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. With a max power dissipation of 1.5W and an hFE of at least 100, it operates up to 150°C making it suitable for various electronic designs.
TIP41C by New Jersey Semiconductor Products

TIP41C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1;
TIP111 by Samsung

TIP111

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP29C by SPC TECHNOLOGY/ MULTICOMP

TIP29C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 100 V;
TIP122 by Kec

TIP122

Kec

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP32C by Diotec Semiconductor Ag

TIP32C

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP32C by Continental Device India

TIP32C

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP42C by Weitron Technology

TIP42C

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;
TIP36C by Microsemi

TIP36C

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Style (Meter): FLANGE MOUNT;
TIP122S by Motorola

TIP122S

Motorola

TIP122S by Motorola is a NPN Darlington transistor with 100V max collector-emitter voltage, 5A max collector current, and 75W max power dissipation. Ideal for switching applications due to its high DC current gain of 1000 (hFE) and nominal transition frequency of 4MHz. Package style: Flange mount, terminal form: Through-hole, package material: Plastic/epoxy.
TIP147 by STMicroelectronics

TIP147

STMicroelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
TIP41C by Fairchild Semiconductor

TIP41C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;