Nexperia - PIMN32-Q

  1. Home
  2. Nexperia - PIMN32-Q
PIMN32-Q by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PIMN32-Q
Description Small Signal Bipolar Transistors; Reference Standard: AEC-Q101;
Datasheet PIMN32-Q Datasheet
NAME DESCRIPTION
Reference Standard: AEC-Q101
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3906 by Micro Commercial Components

2N3906

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
BC847BW,115 by NXP Semiconductors

BC847BW,115

NXP Semiconductors

NXP Semiconductors' BC847BW,115 is a NPN BJT transistor with VCEsat of 0.6V and hFE of 200. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. With a compact SOT package, it offers fast transition frequency at 100MHz.
MMBT3904 by Shanghai Lunsure Electronic Technology

MMBT3904

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Package Body Material: PLASTIC/EPOXY;
MMBT2907A by Panjit International

MMBT2907A

Panjit International

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N2219A by Microchip Technology

2N2219A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
2N3055- by Ge Industrial Solutions

2N3055-

Ge Industrial Solutions

Small Signal Bipolar Transistors;
ZTX651 by Zetex Plc

ZTX651

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
2N2219A by Vishay Intertechnology

2N2219A

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Package Body Material: METAL; Qualification: Not Qualified;
MMBT2222AM3T5G by Onsemi

MMBT2222AM3T5G

Onsemi

MMBT2222AM3T5G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with matte tin finish and operates up to 150°C.
ULN2803AFWG by Toshiba

ULN2803AFWG

Toshiba

Toshiba's ULN2803AFWG is an NPN BJT with 8 Darlington banks, built-in diode and resistor. Ideal for switching applications, it has a max IC of 0.5A and VCE of 50V. With a hFE of 1000, this surface-mount transistor comes in a small outline package shape.
MMBT2222A by Zowie Technology

MMBT2222A

Zowie Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N2907A by Asi Semiconductor

2N2907A

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3906 by STMicroelectronics

2N3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
PMBT2222A,215 by Nexperia

PMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 150 Cel;
2N2222A by Nte Electronics

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
MMBT4403LT1G by Onsemi

MMBT4403LT1G

Onsemi

MMBT4403LT1G by Onsemi is a PNP BJT transistor with max VCEsat of 0.75V, hFE of 100, and IC of 0.6A. Ideal for switching applications due to its small outline package style and high transition frequency of 200MHz. With a max operating temp of 150°C, it offers reliable performance in various electronic circuits.
BC817-25 by Itt Semiconductor

BC817-25

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Terminal Form: GULL WING; Maximum Collector-Emitter Voltage: 45 V;
MMBT2907ALT1G by Onsemi

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
MMBT3904 by General Semiconductor

MMBT3904

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
2N2222A by Electronic Transistors

2N2222A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;