Nexperia - PIMZ2/DG

MMBT3904-TP by Micro Commercial Components is a NPN BJT transistor with hFE of 100, ideal for amplifier applications. With max power dissipation of 0.35W and max collector-emitter voltage of 40V, it operates at up to 150°C. This surface mount device has a small outline package style and offers a transition frequency of 300MHz.

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.

2N6517BU by Onsemi is a NPN BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring small signal amplification due to its high transition frequency of 40MHz and max. power dissipation of 0.625W in a cylindrical package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-206AA;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

BC817.40 by Central Semiconductor is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.5A. It has a min DC current gain of 250 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance, such as amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

BC847C,235 by NXP Semiconductors is a small signal NPN bipolar junction transistor (BJT) with a max VCEsat of 0.6V and a min DC current gain (hFE) of 420. It is commonly used for switching applications and has a max collector-emitter voltage of 45V.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;

Diodes Inc. MMBTA42-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and VCEO of 300V. Ideal for small outline packages with Gull Wing terminals in surface mount configurations.

SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.

BC847BV,115 by NXP Semiconductors is a NPN BJT with 2 elements for switching applications. Features include hFE of 200, VCE of 45V, and IC of 0.1A. It comes in a small outline package suitable for surface mount technology.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Maximum Turn Off Time (toff): 300 ns; Transistor Element Material: SILICON;