Nexperia - PMBT3904-Q

  1. Home
  2. Nexperia - PMBT3904-Q
PMBT3904-Q by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PMBT3904-Q
Description Small Signal Bipolar Transistors;
Datasheet PMBT3904-Q Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ULN2003AIPWRG4 by Texas Instruments

ULN2003AIPWRG4

Texas Instruments

ULN2003AIPWRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. This surface-mount transistor in a small outline package is made of silicon with Gull Wing terminals.
2N2905A by Texas Instruments

2N2905A

Texas Instruments

2N2905A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high transition frequency (200MHz).
MMBT2222A by Surge Components

MMBT2222A

Surge Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;
SMMBT2222ALT3G by Onsemi

SMMBT2222ALT3G

Onsemi

SMMBT2222ALT3G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of 75 (hFE), low power dissipation of 0.3W, and fast turn-on/off times of 35ns/285ns. Its Gull Wing terminals and compact rectangular package make it suitable for surface mount designs.
NSM4002MR6T1G by Onsemi

NSM4002MR6T1G

Onsemi

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.
BC846B by Rectron

BC846B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
BC847,215 by Nexperia

BC847,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC807-40,215 by NXP Semiconductors

BC807-40,215

NXP Semiconductors

NXP Semiconductors' BC807-40,215 is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temp of 150°C and fT of 80MHz, it's ideal for small outline packages in electronic circuits.
BC817-40 by Rectron

BC817-40

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 250;
BC847B by Diodes Incorporated

BC847B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2905A by Micro Commercial Components

2N2905A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Maximum Turn Off Time (toff): 300 ns;
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906,215 by Nexperia

MMBT3906,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
JANTX2N2222AUA by Micropac Industries

JANTX2N2222AUA

Micropac Industries

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Transistor Element Material: SILICON;
BC847C by Central Semiconductor

BC847C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Infineon Technologies

MMBT2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by Shanghai Lunsure Electronic Technology

MMBT2222A

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: R-PDSO-G3;
BC817-40 by STMicroelectronics

BC817-40

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
BC817DS,115 by NXP Semiconductors

BC817DS,115

NXP Semiconductors

BC817DS,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and 6 terminals. It has a max power dissipation of 0.37W, hFE of 40, and operates up to 150°C. Ideal for switching applications due to its small outline package style and high transition frequency of 100MHz.
BC547B by NXP Semiconductors

BC547B

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;