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| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | PMCM6501VNEZ |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.3 A; Terminal Form: BALL; Transistor Application: SWITCHING; |
| Datasheet | PMCM6501VNEZ Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
568-13207-1-ND 1727-2688-2 934068873023 1727-2688-1 568-13207-2 568-13207-1 1727-2688-6 PMCM6501VNEZ-ND 568-13207-6 568-13207-6-ND 5202-PMCM6501VNEZTR 568-13207-2-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 7.3 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 12 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | R-PBGA-B6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | IEC-60134 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .022 ohm |









