PMDPB95XNE2X by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PMDPB95XNE2X
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 30 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	PMDPB95XNE2X Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.7 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.099 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	934068837115 1727-PMDPB95XNE2XCT 1727-2691-2-ND 1727-2691-1-ND 1727-2691-1 1727-2691-2 568-13210-1 568-13210-2 PMDPB95XNE2X-ND 1727-2691-6 568-13210-2-ND 568-13210-1-ND 1727-2691-6-ND 5202-PMDPB95XNE2XTR 1727-PMDPB95XNE2XTR 568-13210-6 568-13210-6-ND 1727-PMDPB95XNE2XDKR 2156-PMDPB95XNE2X-1727
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260

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