Nexperia - PMDT670UPE,115

PMDT670UPE,115 by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMDT670UPE,115
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; Maximum Time At Peak Reflow Temperature (s): 30; Package Body Material: PLASTIC/EPOXY;
Datasheet PMDT670UPE,115 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .55 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .85 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 1727-1334-1
568-10767-1-ND
1727-1334-2
568-10767-2-ND
1727-1334-6
PMDT670UPE115
5202-PMDT670UPE,115TR
568-10767-6
568-10767-2
PMDT670UPE,115-ND
568-10767-6-ND
568-10767-1
934065734115
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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