Nexperia - PMGD175XNEX

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PMGD175XNEX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMGD175XNEX
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; No. of Elements: 2;
Datasheet PMGD175XNEX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .87 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .252 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 1727-2695-6
2156-PMGD175XNEX-NEX
934068835115
568-13214-1-ND
568-13214-2-ND
1727-2695-1
1727-2695-2
568-13214-6
5202-PMGD175XNEXTR
568-13214-6-ND
PMGD175XNEX-ND
568-13214-1
568-13214-2
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
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