Nexperia - PMN15ENE

  1. Home
  2. Nexperia - PMN15ENE
PMN15ENE by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PMN15ENE
Description Power Field-Effect Transistors;
Datasheet PMN15ENE Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS123 by Calogic

BSS123

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Operating Mode: ENHANCEMENT MODE;
NDT456P by Fairchild Semiconductor

NDT456P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (Abs) (ID): 7.5 A;
BSC060N10NS3GATMA1/SAMPLE by Infineon Technologies

BSC060N10NS3GATMA1/SAMPLE

Infineon Technologies

BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
FDN5618P by Onsemi

FDN5618P

Onsemi

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
FDBL86062_F085 by Fairchild Semiconductor

FDBL86062_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDBL86062_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features an EAS of 352mJ, 0.002 ohm On Resistance, and operates in ENHANCEMENT MODE.
FDD4243-F085 by Onsemi

FDD4243-F085

Onsemi

FDD4243-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 24A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and operating temperature range from -55 to 175 °C, it meets AEC-Q101 standards for automotive use.
IRFB4227PBF by Infineon Technologies

IRFB4227PBF

Infineon Technologies

IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
2N7000 by Unisonic Technologies

2N7000

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
IRLL024NTRPBF by International Rectifier

IRLL024NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
CSD18543Q3A by Texas Instruments

CSD18543Q3A

Texas Instruments

CSD18543Q3A by Texas Instruments is a N-CHANNEL Power FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 156A IDM, and 0.0156 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR technology, it operates b/w -55 to 150 °C, making it ideal for high-power switching circuits.
STB6NK90ZT4 by STMicroelectronics

STB6NK90ZT4

STMicroelectronics

STB6NK90ZT4 by STMicroelectronics is a N-CHANNEL FET with 900V DS breakdown voltage, 23.2A IDM, and 300mJ EAS. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 140W at 150°C.
IRF9540NSTRLPBF by International Rectifier

IRF9540NSTRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; No. of Terminals: 2; Terminal Form: GULL WING;
IRLML6401TR by Shenzhen Changyuntong Ic Design

IRLML6401TR

Shenzhen Changyuntong Ic Design

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Position: DUAL; Maximum Turn On Time (ton): 43 ns;
NVTFS5116PLTAG by Onsemi

NVTFS5116PLTAG

Onsemi

NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
NTD5867NLT4G by Onsemi

NTD5867NLT4G

Onsemi

NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
AUIRFZ44N by Infineon Technologies

AUIRFZ44N

Infineon Technologies

AUIRFZ44N by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
IRF640 by NXP Semiconductors

IRF640

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;
IRFR9024PBF by Vishay Siliconix

IRFR9024PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;
IRLML0100TRPBF by Infineon Technologies

IRLML0100TRPBF

Infineon Technologies

IRLML0100TRPBF by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for SWITCHING applications. It features a max drain current of 1.6A, 0.22 ohm on-resistance, and 1.3W power dissipation in a SMALL OUTLINE package. Operating from -55 to 150 °C, it's suitable for various ENHANCEMENT MODE switching tasks.
IRF7304TRPBF by International Rectifier

IRF7304TRPBF

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;