PQMD2Z by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PQMD2Z
Description	NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
Datasheet	PQMD2Z Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	230 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
Other Names:	568-13233-6-ND 934069746147 1727-2712-6 568-13233-2 5202-PQMD2ZTR 568-13233-1 NEXNEXPQMD2Z 2156-PQMD2Z-NEX PQMD2Z-ND 568-13233-6 1727-2712-1 1727-2712-2 568-13233-1-ND 568-13233-2-ND
Polarity or Channel Type:	NPN AND PNP
Minimum DC Current Gain (hFE):	60
JESD-609 Code:	e3
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT IN BIAS RESISTANCE RATIO IS 1
Reference Standard:	AEC-Q101; IEC-60134
Peak Reflow Temperature (C):	260

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