Nexperia - PSMN1R2-30YLDX

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PSMN1R2-30YLDX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PSMN1R2-30YLDX
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0016 ohm; Minimum DS Breakdown Voltage: 30 V; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet PSMN1R2-30YLDX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 1181 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0016 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 961 mJ
Other Names: PSMN1R2-30YLDX-ND
934068235115
PSMN0R9-30YLD,115
568-11556-1
568-11556-2
5202-PSMN1R2-30YLDXTR
1727-1860-1
1727-1860-2
568-11556-2-ND
568-11556-1-ND
1727-1860-6
568-11556-6-ND
568-11556-6
JEDEC-95 Code: MO-235
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Additional Features: HIGH RELIABILITY
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
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