Nexperia - PUMB13-Q

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PUMB13-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PUMB13-Q
Description PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet PUMB13-Q Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 180 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
Minimum Operating Temperature: -65 Cel
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 10
Maximum Collector-Base Capacitance: 3 pF
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Maximum VCEsat: .1 V
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