Nexperia - PUMD16-Q

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PUMD16-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PUMD16-Q
Description Small Signal Bipolar Transistors;
Datasheet PUMD16-Q Datasheet
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BC847C by National Semiconductor

BC847C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222AUA by Silicon Transistor

2N2222AUA

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222A-7-F by Diodes Incorporated

MMBT2222A-7-F

Diodes Incorporated

Diodes Inc. MMBT2222A-7-F is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 40. Ideal for switching applications due to its small outline package style and fast turn-on/off times (35ns/285ns).
2N2905A by Raytheon Semiconductor

2N2905A

Raytheon Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT3904 by Yangzhou Yangjie Electronics

MMBT3904

Yangzhou Yangjie Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Moisture Sensitivity Level (MSL): 1;
MMBT3906 by Changzhou Galaxy Century Microelectronics

MMBT3906

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
2N2907A by Nte Electronics

2N2907A

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Package Body Material: METAL; Minimum DC Current Gain (hFE): 50;
JANTX2N2222A by Motorola

JANTX2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; No. of Terminals: 3; Maximum Turn On Time (ton): 35 ns;
2N2907A by Swampscott Electronics

2N2907A

Swampscott Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC847C by Diotec Semiconductor Ag

BC847C

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2222A by Semiconductor Technology

2N2222A

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3904 by Fairchild Semiconductor

MMBT3904

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
SBC846BDW1T1G by Onsemi

SBC846BDW1T1G

Onsemi

SBC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, min DC current gain of 200 (hFE), and operates up to 150°C. This small outline transistor features a max power dissipation of 0.38W in a rectangular package with Gull Wing terminals.
BC547B by Micro Commercial Components

BC547B

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2907A by Electronic Transistors

2N2907A

Electronic Transistors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3904 by New Jersey Semiconductor Products

2N3904

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; Transistor Element Material: SILICON;
2N2222A by International Devices

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2219A by Texas Instruments

2N2219A

Texas Instruments

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).
2N3904 by Swampscott Electronics

2N3904

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2222AUA by Microsemi

2N2222AUA

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Maximum Collector Current (IC): .8 A; No. of Terminals: 4;