Nexperia - PUMD3-QX

  1. Home
  2. Nexperia - PUMD3-QX
PUMD3-QX by Nexperia

Image shown is a representation only.

Manufacturer Nexperia
Manufacturer's Part Number PUMD3-QX
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet PUMD3-QX Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 230 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Other Names: 934663626115
1727-PUMD3-QXCT
1727-PUMD3-QX-ND
5202-PUMD3-QXTR
1727-PUMD3-QXDKR
1727-PUMD3-QX
1727-PUMD3-QXTR
Polarity or Channel Type: NPN AND PNP
Minimum DC Current Gain (hFE): 30
JESD-609 Code: e3
Minimum Operating Temperature: -65 Cel
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 1
Maximum Collector-Base Capacitance: 2.5 pF
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
Maximum VCEsat: .1 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT3904 by Vishay Semiconductors

MMBT3904

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; JEDEC-95 Code: TO-236AB;
BC847C,235 by Nexperia

BC847C,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Silicon Standard

MMBT2222A

Silicon Standard

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222AUB by Optek Technology

JANTX2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NTE103 by Nte Electronics

NTE103

Nte Electronics

NTE103 by Nte Electronics is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 24, and VCE of 16V. Ideal for switching applications due to its Germanium element material and max. collector current of 0.15A in a cylindrical package shape with wire terminals.
2N3904 by Itt Semiconductor

2N3904

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-25 by Taiwan Semiconductor

BC817-25

Taiwan Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
MMBT3906 by Shanghai Lunsure Electronic Technology

MMBT3906

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY;
BCX19LT1G by Onsemi

BCX19LT1G

Onsemi

BCX19LT1G by Onsemi is a NPN BJT with 3 terminals, max power dissipation of 0.225W, and min DC current gain of 40. Ideal for small outline applications, it operates at up to 150°C with a max collector-emitter voltage of 45V. Suitable for surface mount designs requiring a compact rectangular package shape.
BC847AE6327HTSA1 by Infineon Technologies

BC847AE6327HTSA1

Infineon Technologies

BC847AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 110, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C and has a collector current of 0.1A.
BC846B by Formosa Microsemi

BC846B

Formosa Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 65 V;
2N3904 by STMicroelectronics

2N3904

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906TT1G by Onsemi

MMBT3906TT1G

Onsemi

MMBT3906TT1G by Onsemi is a PNP small signal BJT transistor with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 250MHz.
2N3904 by Loras Industries

2N3904

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by SPC TECHNOLOGY/ MULTICOMP

2N3904

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 250 ns;
BC817-40 by General Semiconductor

BC817-40

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC547ATA by Fairchild Semiconductor

BC547ATA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Samsung

MMBT2222A

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BC847BT116 by ROHM

BC847BT116

ROHM

ROHM BC847BT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 200, and IC of 0.1A. Ideal for amplifier applications, it has a max operating temp of 150°C and transition frequency of 200MHz. Its GULL WING terminals make it suitable for surface mount designs.
BC807-40LT1G by Onsemi

BC807-40LT1G

Onsemi

BC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. Features include VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for small outline packages in high-speed circuits.