Nexperia - PZTA44/ZL

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PZTA44/ZL by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PZTA44/ZL
Description Power Bipolar Transistors;
Datasheet PZTA44/ZL Datasheet
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TIP42A by Onsemi

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PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3055 by Hi-tron Semiconductor

2N3055

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
ULN2803LW by Allegro MicroSystems

ULN2803LW

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NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified; JEDEC-95 Code: MS-013AB;
D44H11G by Onsemi

D44H11G

Onsemi

D44H11G by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its high power dissipation of 50W and low min DC current gain (hFE) of 40.
BCP53-16T3G by Onsemi

BCP53-16T3G

Onsemi

BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.
BDX53C by Onsemi

BDX53C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;
TIP142T by Baneasa S A

TIP142T

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
TIP122 by Weitron Technology

TIP122

Weitron Technology

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
TIP125 by Bourns

TIP125

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP120 by Diotec Semiconductor Ag

TIP120

Diotec Semiconductor Ag

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Moisture Sensitivity Level (MSL): 1; Terminal Form: THROUGH-HOLE;
BDW93C by SPC TECHNOLOGY/ MULTICOMP

BDW93C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;
MJL21194G by Onsemi

MJL21194G

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The Onsemi MJL21194G is a NPN power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power amplification needs.
MJE3055T by Fairchild Semiconductor

MJE3055T

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP47 by Continental Device India

TIP47

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
MJ11015G by New Jersey Semiconductor Products

MJ11015G

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 30 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 120 V;
TIP3055G by Onsemi

TIP3055G

Onsemi

TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.
TIP127FP by STMicroelectronics

TIP127FP

STMicroelectronics

TIP127FP by STMicroelectronics is a PNP power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, collector current of 5A, and DC current gain of 1000. With a package style of flange mount and max operating temperature of 150°C, it offers efficient performance in various electronic circuits.
TIP115 by Texas Instruments

TIP115

Texas Instruments

TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.
TIP142 by Power Innovations

TIP142

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
MJD340T4 by STMicroelectronics

MJD340T4

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .5 A; Terminal Position: SINGLE;