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Manufacturer | Nte Electronics |
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Manufacturer's Part Number | 2N7000 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; |
Datasheet | 2N7000 Datasheet |
In Stock | 46,113 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .2 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | Matte Tin (Sn) - annealed |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .4 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-PBCY-T3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | 5 ohm |
Maximum Feedback Capacitance (Crss): | 5 pF |
JEDEC-95 Code: | TO-92 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | LOGIC LEVEL COMPATIBLE |
Maximum Drain Current (Abs) (ID): | .2 A |
Peak Reflow Temperature (C): | 240 |