Nte Electronics - 612

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 20 V; Minimum Quality Factor: 66;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BB119-AMMOPAK by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a max reverse current of 2 µA, operates up to 200 °C, and has a reverse test voltage of 15 V. Its isolated case connection ensures reliable performance in various circuits.

The Onsemi MV2115 is a single varactor diode with a min quality factor of 100, ideal for RF applications. With a nominal capacitance of 100 pF and a breakdown voltage of 30 V, it offers precise tuning capabilities in cylindrical package style. Its silicon element material and through-hole terminal form make it suitable for high-frequency circuits requiring variable capacitance control.

MV2109ZL1 by Onsemi is a Varactor Diode with 33pF capacitance, 30V breakdown voltage, and 200 min quality factor. It is ideal for RF tuning applications due to its variable capacitance feature and can operate at temperatures up to 150 °C.

BB804-0 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C, making it ideal for RF tuning circuits. Its compact surface mount design ensures efficient space utilization in electronic devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 20;

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;

The Onsemi MV1630 is a single varactor diode with 18pF nominal capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

BB804-2 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse voltage of 16V, operates at up to 100 °C, and has a min capacitance ratio of 1.65. Ideal for RF tuning circuits, it comes in a compact surface mount package.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 10; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Diode Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;

SMV1213-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 22pF nominal capacitance, 12V breakdown voltage, and 0.25W power dissipation. It is used in applications requiring variable capacitance control in RF circuits for signal tuning and filtering.

BB249TRL by NXP Semiconductors is a single, surface-mount variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8 and comes in a long-form round glass package with isolated case connections. Ideal for RF tuning and voltage-controlled oscillators, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;