Nte Electronics - MJE3055T

TIP41C by Texas Instruments is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. Its silicon material and 3MHz fT make it suitable for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; JEDEC-95 Code: TO-126;

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON; JESD-609 Code: e0;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-609 Code: e3; Package Style (Meter): FLANGE MOUNT;

The Onsemi BD13916S is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. It has a min. DC current gain of 100 and can dissipate up to 12.5W power, suitable for high-power circuits in various electronic devices. The package style is flange mount with through-hole terminals, making it easy to integrate into circuit boards efficiently.

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

STMicroelectronics ULN2064B is a 4-bank NPN BJT with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.4V, max IC of 1.75A, and VCE of 35V. Packaged in PLASTIC/EPOXY material with 16 terminals in RECTANGULAR shape for THROUGH-HOLE mounting.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 10 A; No. of Terminals: 3;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Finish: TIN LEAD;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

MJD112T4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 2A, and min DC current gain of 200. With a package style of small outline and surface mount capability, it operates up to 150°C making it suitable for various power applications.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 10;

BD13916 by Fairchild Semiconductor is a NPN BJT transistor with max. power dissipation of 12.5W and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 100, it operates at up to 150°C and has a max. collector-emitter voltage of 80V in a through-hole package style.