1N5059T/R by NXP Semiconductors | Diodes

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	1N5059T/R
Description	RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ELLIPTICAL;
Datasheet	1N5059T/R Datasheet
In Stock	19,569

NAME	DESCRIPTION
Package Body Material:	GLASS
No. of Phases:	1
Config:	SINGLE
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	.8 A
Maximum Repetitive Peak Reverse Voltage:	200 V
Surface Mount:	NO
Minimum Operating Temperature:	-65 Cel
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	AXIAL
Package Style (Meter):	LONG FORM
Technology:	AVALANCHE
JESD-30 Code:	E-LALF-W2
No. of Elements:	1
Package Shape:	ELLIPTICAL
Terminal Form:	WIRE
Maximum Operating Temperature:	175 Cel
Reference Standard:	CECC50008-015
Case Connection:	ISOLATED
Maximum Reverse Recovery Time:	3 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
19,569	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

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Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;