NXP Semiconductors - 2N7002PS,115

  1. Home
  2. NXP Semiconductors - 2N7002PS,115
2N7002PS,115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 2N7002PS,115
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .99 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): .32 A;
Datasheet 2N7002PS,115 Datasheet
In Stock458,373
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .32 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Power Dissipation (Abs): .99 W
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .32 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
458,373 - -

Popular Products

Category Top Products

IRF540PBF by International Rectifier

IRF540PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 230 mJ; JESD-609 Code: e3;
2N7000 by Unisonic Technologies

2N7000

Unisonic Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
NCV8406ASTT1G by Onsemi

NCV8406ASTT1G

Onsemi

NCV8406ASTT1G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in temperatures from -40 to 150 °C.
G3R350MT12J by Genesic Semiconductor

G3R350MT12J

Genesic Semiconductor

Power Field-Effect Transistors;
RFD14N05LSM9A by Intersil

RFD14N05LSM9A

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-252AA;
BSP318SH6327XTSA1 by Infineon Technologies

BSP318SH6327XTSA1

Infineon Technologies

Infineon's BSP318SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 10.4A Pulsed Drain Current. Ideal for automotive applications, it features a built-in diode, 0.15 ohm On Resistance, and 260°C Peak Reflow Temperature.
IRFS4410ZTRLPBF by Infineon Technologies

IRFS4410ZTRLPBF

Infineon Technologies

IRFS4410ZTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 390A IDM, 242mJ EAS, and 0.009 ohm RDS(on). Ideal for SWITCHING applications, this ENHANCEMENT MODE transistor operates at up to 175°C and has a max power dissipation of 230W in a SMALL OUTLINE package.
IRLML2244TRPBF by Infineon Technologies

IRLML2244TRPBF

Infineon Technologies

IRLML2244TRPBF by Infineon Technologies is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A Max IDM, and 0.054 ohm Max RDS(on). With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, making it ideal for various power management needs.
IRF7304TRPBF by International Rectifier

IRF7304TRPBF

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
2N7002 by Weitron Technology

2N7002

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
FQP47P06 by Fairchild Semiconductor

FQP47P06

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
IRF3205PBF by Infineon Technologies

IRF3205PBF

Infineon Technologies

IRF3205PBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage and 390A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE. With 0.008 ohm RDS(on), it can handle up to 75A ID current efficiently.
IAUT300N10S5N015ATMA1 by Infineon Technologies

IAUT300N10S5N015ATMA1

Infineon Technologies

Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
IRF7342TRPBF by International Rectifier

IRF7342TRPBF

International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; Moisture Sensitivity Level (MSL): 1;
AUIRF4905STRL by International Rectifier

AUIRF4905STRL

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 55 V;
SI7850DP-T1-GE3 by Vishay Intertechnology

SI7850DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7850DP-T1-GE3 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 40A IDM and 11mJ EAS, operating in enhancement mode. With a compact rectangular package style and flat terminals, it offers high performance in a small outline design.
FQP3P50 by Fairchild Semiconductor

FQP3P50

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; No. of Terminals: 3; Transistor Application: SWITCHING;
RFD16N05LSM9A by Intersil

RFD16N05LSM9A

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Terminal Finish: TIN LEAD; JEDEC-95 Code: TO-252AA;
IRLL110TRPBF by International Rectifier

IRLL110TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
FQD12N20LTM by Fairchild Semiconductor

FQD12N20LTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: GULL WING;