NXP Semiconductors - 5205/BPA

  1. Home
  2. NXP Semiconductors - 5205/BPA
5205/BPA by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 5205/BPA
Description WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 1.5; Maximum Operating Frequency: 400 MHz; Construction: COMPONENT; Maximum Operating Temperature: 125 Cel; Characteristic Impedance: 50 ohm;
Datasheet 5205/BPA Datasheet
In Stock2,465
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 1.5
Construction: COMPONENT
Minimum Operating Frequency: 0 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 125 Cel
Maximum Operating Frequency: 400 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -55 Cel
Gain: 17 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,465 - -

Popular Products

Category Top Products

MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
1214-800P by Microsemi

1214-800P

Microsemi

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: MODULE(UNSPEC); Power Supplies (V): 50;
ADL5521ACPZ-R7 by Analog Devices

ADL5521ACPZ-R7

Analog Devices

ADL5521ACPZ-R7 by Analog Devices is a wide band low power RF amplifier with a gain of 10.5 dB, operating frequency range from 400 MHz to 4000 MHz, and max input power of 20 dBm. It is constructed using GaAs technology, has a characteristic impedance of 50 ohm, and is suitable for applications requiring high-frequency amplification in RF and microwave systems.
HMC618LP3ETR by Hittite Microwave

HMC618LP3ETR

Hittite Microwave

NARROW BAND LOW POWER;
MGA-30889-BLKG by Broadcom

MGA-30889-BLKG

Broadcom

Broadcom's MGA-30889-BLKG is a GAAS RF amplifier with 14.6 dB gain, operating from 40 MHz to 2600 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component features surface mounting and matte tin terminals, with a characteristic impedance of 50 ohms.
NPA1006A-TR0500 by M/a-com Technology Solutions

NPA1006A-TR0500

M/a-com Technology Solutions

NPA1006A-TR0500 by M/a-com: RF amplifier with 12.5dB gain, 20-1000MHz frequency range, and 50 ohm impedance. Ideal for wideband high-power applications in temperatures from -40 to 85°C. Package material is plastic/epoxy, suitable for surface mount installation with 8 terminals.
HMC505LP4E by Hittite Microwave

HMC505LP4E

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
RFPA3800TR13 by Qorvo

RFPA3800TR13

Qorvo

Qorvo's RFPA3800TR13 is a GAAS technology wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for applications requiring high power amplification in RF & Microwave systems.
GALI-6F+F55 by Mini-circuits

GALI-6F+F55

Mini-circuits

GALI-6F+F55 by Mini-circuits is a RF & Microwave Amplifier with 4.8V power supply, operating from -45°C to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic systems.
TCBT-14+ by Mini-circuits

TCBT-14+

Mini-circuits

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.
HMC608LC4TR by Hittite Microwave

HMC608LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
TGA2975-SM by Triquint Semiconductor

TGA2975-SM

Triquint Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAN; No. of Functions: 1;
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
NBB-400-T1 by Qorvo

NBB-400-T1

Qorvo

Qorvo's NBB-400-T1 is a ceramic RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates at temperatures from -45 to 85°C and requires a 3.9V supply voltage.
HMC952ALP5GE by Analog Devices

HMC952ALP5GE

Analog Devices

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
MGA-62563-TR1G by Agilent Technologies

MGA-62563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;
MMZ09332BT1 by Freescale Semiconductor

MMZ09332BT1

Freescale Semiconductor

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.